Interface dark excitons at sharp lateral two-dimensional heterostructures

نویسندگان

چکیده

We study the dark excitons at interface of sharp lateral heterostructure two-dimensional transition metal dichalcogenides. By introducing a low-energy effective Hamiltonian model, we find energy dispersion relation exciton and show how it depends on onsite composed materials their spin-orbit coupling strengths. It is shown that effect geometrical structure interface, as deformation gauge field (pseudo-spin-orbit coupling), should be considered in calculating binding exciton. discretization real-space version triangular lattice, its distance from line. For near equal to 0.36 eV, while for enough far 0.26 eV. Also, has been zigzag increases by 0.34 meV comparison with armchair due pseudo-spin-orbit interaction (gauge filed). The results can used designing based optoelectronic devices improving characteristics.

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ژورنال

عنوان ژورنال: Physica Scripta

سال: 2021

ISSN: ['1402-4896', '0031-8949']

DOI: https://doi.org/10.1088/1402-4896/abe494